Method and apparatus for programming an anti-fuse element in a high-voltage integrated circuit

ABSTRACT

A method for programming a programmable block of a power IC device includes selecting an anti-fuse element of the programmable block to be programmed. The anti-fuse element includes first and second capacitive plates separated by a dielectric layer. A voltage pulse is then applied to a pin of the power IC device. The pin is connected to a drain of a high-voltage field-effect transistor (HVFET) that drives an external load via the pin during a normal operating mode of the power IC device. The voltage pulse, which is coupled to the first capacitive plate of the anti-fuse element, has a potential sufficiently high to cause a current to flow through the anti-fuse element that destroys at least a portion of the dielectric layer, thereby electrically shorting the first and second capacitive plates.

TECHNICAL FIELD

The present disclosure generally relates to a circuit for programming ananti-fuse element in a high-voltage integrated circuit.

BACKGROUND

A common type of integrated circuit (IC) device is ametal-oxide-semiconductor field effect transistor (MOSFET) that includesa source region, a drain region, a channel region. In high voltageapplications, a high voltage MOSFET known as an HVFET (high voltagefield effect transistor) maybe used. Many HVFETs employ a devicestructure that includes an extended drain region that supports or“blocks” the applied high-voltage (e.g., 150 volts or more) when thedevice is in an ‘off’ or substantially non-conducting state.Conventional HVFETs are commonly formed as lateral or vertical devicestructures. In a lateral HVFET, current flow, when HVFET is in an ‘on’state, is horizontal or substantially parallel to a surface of thesemiconductor substrate. In a vertical HVFET, current flows verticallythrough the semiconductor material, e.g., from a top surface of thesubstrate where the source region is disposed, down to the bottom of thesubstrate where the drain region is located.

Conventional high voltage IC's often employ a large vertical or lateralHVFET in a configuration wherein the drain of the output transistor iscoupled directly to an external pin that may be at a high voltage. Thehigh voltage IC device typically includes a controller circuit thatoperates on low voltage (0 V-12 V) that is separate from the HVFET, butcan be still included in the same high voltage IC. To provide start-upcurrent for the controller circuit of the high voltage IC, a highexternal voltage may be applied to the external pin. The internalcircuitry of the device is typically limit-protected from the highexternally-applied voltage by a junction field-effect transistor (JFET)“tap” structure. For example, when the drain of the high voltage outputtransistor is taken to, say 550 V, the tap transistor limits the maximumvoltage coupled to an internal node to approximately 50 V, and alsoprovides a small (2-3 mA) current for start-up of the controller. By wayof further background, U.S. Pat. No. 7,002,398 discloses athree-terminal JFET transistor that operates in this manner.

The operating characteristics of a high voltage IC are typically set bya method known as trimming. More specifically, trimming of high voltageIC typically occurs prior to implementation in a useful circuit toadjust certain parameters. More specifically, the process of trimmingmay involve selectively closing (or opening) one or more electricalelements that indicates to the controller to adjust certain operatingcharacteristics of the high voltage IC. In one example, the electricalelements used for trimming may be zener diodes. During the process oftrimming, one or more zener diodes may be off (non-conducting electricalelements). To change the conducting state of a zener element a voltage(>10 V) is typically applied to breakdown the zener. After breakdown ofthe zener element a current (150-200 mA) passes between the anode andcathode terminals to short the zener element permanently. The cumulativecurrent flowing through the one or more zener elements may be used toprogram one or more analog parameters. For example, a zener diode may beused to trim or program an analog parameter such as switching frequencyin a high voltage IC used in a switch mode power supply. For example, ananalog parameter such as switching frequency may be set within aspecified tolerance in the controller section of the power IC by shortcircuiting one or more zener diodes.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure will be understood more fully from the detaileddescription that follows and from the accompanying drawings, whichhowever, should not be taken to limit the invention to the specificembodiments shown, but are for explanation and understanding only.

FIG. 1 illustrates an example high voltage IC device block diagram.

FIG. 2 illustrates an example circuit schematic diagram of the trimmingblock of FIG. 1

FIG. 3 is an example flow diagram of a sequence of steps for trimming ahigh voltage IC.

DESCRIPTION OF EXAMPLE EMBODIMENTS

A method and apparatus for programming an anti-fuse element of a powerIC is disclosed. In the following description specific details are setforth, voltages, structural features, manufacturing steps, etc., inorder to provide a thorough understanding of the disclosure herein.However, persons having ordinary skill in the relevant arts willappreciate that these specific details may not be needed to practice theembodiments described. References throughout this description to “oneembodiment”, “an embodiment”, “one example” or “an example” means that aparticular feature, structure or characteristic described in connectionwith the embodiment or example is included in at least one embodiment.The phrases “in one embodiment”, “in an embodiment”, “one example” or“an example” in various places throughout this description are notnecessarily all referring to the same embodiment or example.Furthermore, the particular features, structures or characteristics maybe combined in any suitable combinations and/or sub-combinations in oneor more embodiments or examples.

It should be understood that the elements in the figures arerepresentational, and are not drawn to scale in the interest of clarity.It is also appreciated that although an IC utilizing mostly N-channeltransistor devices (both high-voltage and low-voltage) are disclosed,P-channel transistors may also be fabricated by utilizing the oppositeconductivity types for all of the appropriate doped regions.

In the context of the present application a high-voltage or powertransistor is any semiconductor transistor structure that is capable ofsupporting 150 volts or more in an “off” state or condition. In oneembodiment, a power switch is a high voltage field effect transistor(HVFET) illustrated as an N-channel metal oxide semiconductorfield-effect transistor (MOSFET) with the high-voltage being supportedbetween the source and drain regions. In other embodiments, a powerswitch may comprise a bipolar junction transistor (BJT), an insulatedgate field effect transistor (IGFET), or other device structures thatprovide a transistor function.

For purposes of this disclosure, “ground” or “ground potential” refersto a reference voltage or potential against which all other voltages orpotentials of a circuit or IC are defined or measured. A “pin” providesa point of external electrical connection to an IC device or package,thereby allowing external components, circuits, signals, power, loads,etc., to be coupled to the internal components and circuitry of a highvoltage IC.

It is further appreciated within the context of this disclose that a‘high’ voltage is defined as a voltage that is substantially 150 V orgreater, a ‘medium’ voltage is defined between 150 V and 50 V, and a‘low’ voltage is defined to be less than 12 V.

As shown, FIG. 1 is a block diagram illustrating an example high voltageIC 100 including a high voltage (HV) switch 102 that may berepresentative of a high voltage field effect transistor (HVFET) a highvoltage (HV) drain terminal 104, a source terminal 106, a tap element108, a low voltage (LV) controller 112, an isolation block 114, atrimming circuit block 116, a supply terminal 118, and a feedbackterminal 120. As shown, high voltage switch 102 is coupled between HVdrain terminal 104 and source terminal 106. In one example, high voltageswitch 102 may be used in a power supply to control the current throughthe primary winding of an energy transfer element, such as a coupledinductor. In operation, HV drain terminal 104 is typically coupled toreceive input from an external circuit (not shown). As further shown, asource terminal 106 is coupled to another end of HV switch 102. A tapelement 108 is coupled to HV drain terminal 104. In operation, tapelement 108 provides a buffer between circuitry in high voltage IC 100and HV drain terminal 104. In one example, tap element 108 includes athree terminal (i.e., electrode) transistor device structure in which avoltage at a first or tap terminal is substantially proportional to anapplied voltage across the second and third terminals when the appliedvoltage is less than a pinch-off voltage of the transistor device. Whenthe applied voltage across the second and third terminals exceeds thepinch-off voltage, the voltage provided at the tap terminal issubstantially constant or unchanging with increased applied voltage. Inone embodiment, tap element 108 comprises a junction field-effecttransistor (JFET). In operation, tap element 108 provides a bufferbetween HV terminal 104 and internal circuitry in high voltage IC thatis rated for much lower voltages. For example, during normal operationHV terminal 104 may be exposed to voltages in excess of 550 V where asthe pinch-off voltage (maximum voltage exposed to internal circuitry ofhigh voltage IC 100) is no more than 50 V. In this manner, tap element108 provides a buffer and prevents other internal elements in highvoltage IC from being rated at significantly high voltages whichtranslates into a smaller high voltage IC 100.

As shown, trimming circuit block 116 is coupled to HV drain terminal 104through isolation block 114. In operation, trimming circuit block 116allows for a trimming process of high voltage IC 100. More specifically,trimming may involve selectively closing (or opening) one or moreelectrical elements that indicates to the controller to adjust certainoperating characteristics of the high voltage IC. In one example,trimming process may be done on high voltage IC 100 to assureperformance meets specifications. According to the present invention,trimming is a process of writing or programming an anti-fuse in responseto setting certain operating characteristics of high voltage IC 100. Asshown, trimming block 116 includes a programmable anti-fuse block 122,and anti-fuse programming block 124. In one example, programmableanti-fuse block 122 consists of a series or array of anti-fusestructural elements. To be more specific, according to the presentdisclosure, an anti-fuse is a circuit element that provides a normallyopen electrical connection in a device structure like that of acapacitor, with two or more layers of metal, polysilicon, or dopedsemiconductor material separated by a dielectric layer (e.g., oxide,nitride, etc.). The electrical connection between the two layers can bepermanently closed by applying a large voltage across two conductorswhich acts to break down or destroy the dielectric layer, therebyelectrically shorting the two metal layers. In operation, programmableanti-fuse block 122 may be programmed through the HV drain terminal 104.

As shown, anti-fuse programming block 124 is coupled to LV controller112 and programmable anti-fuse block 122. In one example, anti-fuseprogramming block 124 includes a series of selector switches that areelectrically coupled in series with an individually correspondinganti-fuse included in programmable anti-fuse block 122. A selectorswitch may be any type of transistor or switch that allows current topass through its corresponding anti-fuse. During a trimming operation,certain selector switches of anti-fuse programming block 124 may beactivated (one at a time) to allow a medium voltage (approx. V) to beapplied across an anti-fuse, the dielectric of the anti-fuse breaks downand allows current to pass through. In this manner, the selectorswitches coupled to its corresponding anti-fuse, when activated (turnedon), allow the shorting of the anti-fuse. In other words, the anti-fuseis programmed or written when the anti-fuse breaks down and allowscurrent to pass through. During the trimming process, in other wordswriting of the anti-fuses, the low voltage (LV) controller 112 mayoutput an address signal U_(ADD), which activates selector switches inanti-fuse programming block 124 so that its corresponding anti-fuse maybe programmed. As shown, a read block 126 is coupled to programmableanti-fuse block to determine which anti-fuses in programmable anti-fuseblock 122 have been programmed or shorted. In this manner, LV controller112 may make adjustments to operating characteristics of high voltage IC100.

During programming operation, isolation block 114 is turned “on” tocouple an externally-applied medium voltage to anti-fuse block 122. Atthe same time, one of the selector switches of anti-fuse programmingblock 124 coupled to a targeted anti-fuse to be shorted is turned on.This allows for the externally-applied medium voltage to be appliedacross only one anti-fuse at a time, such that one capacitor is shortedat a time. All of the other selector switches in anti-fuse programmingblock 124 are turned “off”. It is appreciated that during normaloperation of high voltage IC 100 isolation block disables trimmingcircuit block 116 from the medium voltage (50 V) at a node 129 of tapeelement 108.

As shown, FIG. 2 further illustrates an example high voltage IC 200. Asshown, high voltage IC 200 includes a HV switch 202, a HV terminal 204,source terminal 206, tap element 208, a LV controller 212, acounter/decoder 266, an isolation block 214, a trimming block 216, asupply terminal 218, a feedback terminal 220, a programmable anti-fuseblock 222, a switching block 224, and a read block 226. In one example,HV switch 202, tap element 208, LV controller 212, isolation block 214,trim block 216, switching block 224 and read block 226 may be examplesof HV switch 102, tap element 108, LV controller 112, isolation block114, trim block 116, anti-fuse programming block 124 and read block 126,respectively.

As shown, in the example HV IC 200, tap element 208 may include a taptransistor structure that protects circuitry in high voltage IC fromvoltage greater than approximately 80 V. For example, when the voltageat high (HV) terminal 204 is taken to, say 550 V, the tap transistorlimits the maximum voltage at node 229 to approximately 80 V, and alsoprovides a small (2-3 mA) current. In normal operating conditions,isolation block 214 isolates trimming circuit block 216 from the voltageappearing at a node 229. A node 238 of trimming circuit block 216 isshown coupled to node 229 through isolation block 214. As further shown,node 229 also comprises a first or “tap” terminal of tap element 208. Asecond terminal of tap element 208 is coupled to HV drain terminal 204,which is also coupled to the drain of high voltage switch 202. A thirdterminal, which is coupled to the gate of the JFET tap transistorstructure, is normally grounded.

Persons of skill in the semiconductor arts will appreciate that tapelement 208 and high voltage switch 202 may be integrated into a singledevice structure. It is further appreciated that node 238 may receive avoltage large enough to trim anti-fuses in programmable anti-fuse block222 from an external voltage source, or an internal voltage source inhigh voltage IC 200. It is also appreciated that trimming block 216 andLV controller 212 are normally fabricated on the same piece of siliconmaterial.

As shown, isolation block 214 includes a PMOS transistor 230 and an NMOSlevel shift transistor 232, and a level shift resistor 234. As isfurther shown, node 229 is coupled to the source of transistor 230 andto one end of resistor 234 of isolation block 214. In one example, PMOStransistor 230 may be rated up to 50 V. The other end of resistor 234 isshown coupled to the gate of transistor 230, and also to the drain oflevel shift transistor 232. The source of transistor 232 is coupled toground. Practitioners will appreciate that transistor 230 of isolationblock 214 functions to isolate trimming block 216 from medium voltageproduced by tap element 208 at node 229 under normal operatingconditions.

In operation, level shift transistor 232 and resistor 234 level shiftcontrol signal U_(CON) to the gate control signal of transistor 230.More specifically, a connection signal (J_(am) is received at the gateof level shift transistor 232 to turn transistor 232 ‘on’, which, inturn, turns “on” transistor 230, thereby coupling node 229 to 238. Inoperation, connection signal U_(CON) may connect node 229 to node 238during a trimming operation, and may disconnect node 229 from 238 duringnormal operation. In one implementation, the current through level shifttransistor 232 and resistor 234 may be designed such that when thetransistor 232 is turned on, the gate-to-source voltage of transistor230 is limited to about 10 V. In certain embodiments, the gate of levelshift transistor 232 may be clamped.

As shown, trimming circuit block 216 further includes programmableanti-fuse block 222 and switching block 224. As shown, programmableanti-fuse block 222 comprises multiple programmable anti-fuse elementsAF₁, AF₂ . . . AF_(n), where n is an integer. Each anti-fuse programmingelement AF is coupled between node 238 and a corresponding selectorswitch (SW) included in switching block 224. Prior to programming (i.e.,trimming), the anti-fuse AF does not pass any current; that is, itappears as an open circuit to a normal D.C. operating voltage (e.g.,VDD=5-6 V).

A selected anti-fuse (e.g., AF₁) in block 216 may be programmed byturning on the corresponding selector switch (e.g., SW₁) in block 224and then applying a voltage pulse at node 238 (e.g., 30-35 V, 0.5-1.0 mAfor 2-5 ms). The voltage required to blow the anti-fuse depends on thegate oxide thickness (e.g., ˜30 V for 25 nm oxide). Application of sucha high voltage pulse may cause the gate oxide of the anti-fuse structureto rupture, resulting in a permanent short between the top and bottomplate of the anti-fuse AF₁, with a resistance typically on the order ofa few thousand ohms. The state of anti-fuse AF₁ can later be read bysensing its resistance by read block 226. As described throughout thisdisclosure, the trimming pulse utilized to trim the anti-fuseprogramming element may be provided externally through the HV drainterminal 204.

Practitioners in the art will appreciate that the amount of currentrequired to trim anti-fuse structure AF is significantly smaller ascompared to existing zener diodes, which normally require >150 mA.Additionally, persons of skill in the art will understand that theprogrammable anti-fuse block disclosed herein may reduce the overallsize of the trimming circuit block 216 of high voltage IC 200 by afactor of about five or more as compared to prior art designs. In oneembodiment, each anti-fuses AF of programmable anti-fuse block 222comprises a tiny area of gate oxide, ˜10 μm².

In operation, a programming or trimming HV pulse may be applied to HVdrain terminal 204 of high voltage IC 200 and transferred to trimmingblock 216 through tap element 208 and isolation block 214. As shown,trimming circuit block 216 also includes switching block 224 whichcomprises multiple selector switches SW₁, SW₂ . . . SW_(n), each ofwhich is respectively coupled to a corresponding anti-fuse AF₁, AF₂ . .. AF_(n). In one embodiment, selector switches SW are MOSFETS that maywithstand up to 50 V. To program a selected anti-fuse AF, the gate ofthe corresponding selector switch SW is turned “on” by raising the gateto a high potential while the source is coupled to ground through alow-impedance switch. All of the other selector switches SW (associatedwith unselected anti-fuses) are off (e.g., gate grounded with theirsources coupled to ground through a high-impedance). More specifically,an address signal U_(ADD) is delivered to a corresponding selectorswitch in switching block 224 that corresponds with the anti-fuse AFthat has been selected to be shorted or trimmed. In this manner, LVcontroller 212 and decoder 266 may output address signal U_(ADD) toisolate and trim the anti-fuse that is picked for trimming.

According to one embodiment, one anti-fuse AF may be trimmed at a time.Multiple anti-fuses AF may be trimmed (shorted), with the trimming ofeach being performed sequentially. During trimming operations,transistor 230 in isolation block 214 is turned on, which connectsprogrammable anti-fuse block to node 229. A pulsed voltage is thenapplied to HV drain terminal 204, which causes a lower internal voltageto be produced at node 229. Note that the pulsed voltage applied to HVterminal 204 may be several hundred volts (e.g., 600-700 V), but tapelement 208 limits the voltage appearing at node 229 to a much lowervoltage potential (e.g., about 50 V).

Persons of ordinary skill will appreciate that high voltage switch 202,which in one embodiment may be a MOSFET, is designed and fabricated towithstand a high pulsed voltage up to approximately 700 V during normaloperation. In another example, the gate of selector switch may be pulsedwhile maintaining a constant high voltage at drain terminal 204. Whenthe a voltage pulse of about 30 V or greater is applied across theselected anti-fuse AF, the gate oxide separating the two terminals orcapacitive plates ruptures, thereby programming (shorting) the anti-fusestructure. For the unselected anti-fuses AF—i.e., the ones that are notintended to be blown or shorted—the gate of the corresponding selectorswitch SW is grounded such that selector switch SW is off. Consequently,the voltage appearing at the bottom capacitive plate (coupled to thedrain of selector switch SW) rises in potential, substantially trackingthat of the top plate (coupled to node 238). Hence, the gate oxides ofthe unselected anti-fuses AF are not ruptured and the device structuresremain open circuits.

In operation, supply pin 218 that provides power to internal circuit inhigh voltage IC 200. In one example, supply pin 218 may be coupled to asupply capacitor that is charged by HV drain terminal 204 via tapelement 208. In operation, feedback terminal 220 provides information toLV controller 112 such that it may drive high voltage switch 102. In oneexample, high voltage IC 200 is used in a switch mode power supply andhigh voltage switch 102 regulates the transfer of energy by limiting acurrent through the primary winding of a coupled inductor or atransformer.

FIG. 3 is an example flow diagram of a sequence of steps for programmingan anti-fuse shown in the embodiment of FIG. 2. The sequence begins atblock 310 with the application of 5 V to the HV drain terminal 202. Thisis a safety measure to make sure current is not flowing out of the HVdrain terminal 202. In block 320, a counter/decoder 266 may be utilized(e.g., clocked) to select and turn on the appropriate selector switchSW. That is, a voltage is applied to the gate of the selector switch SWthat corresponds to the anti-fuse AF selected to be programmed, the gatevoltage being sufficiently high so as to turn on that selector switchSW. The other selector switches SW associated with the unselectedanti-fuses have their gates coupled to ground to ensure that they remainoff.

Next, as shown in block 330, level shift transistor 232 is turned “on”,which causes transistor 230 (P1) to turn on. In effect, this allows node238 to be coupled to node 229 and be at the same voltage potential. HVterminal 204 is then pulsed with a high voltage; that is, node 229 israised to ˜50 V and then lowered back down to 5 V. In one embodiment, a2 ms duration pulse having a rise time/fall time of ˜100 μs may beapplied. At decision block 350, if trimming has been completed for allanti-fuses, the process is finished. If further trimming is necessary,then the flow diagram proceeds back to block 320, where thecounter/decoder is clocked to select and turn on the next selectorswitch corresponding to the targeted anti-fuse for trimming.

Although the present invention has been described in conjunction withspecific embodiments, those of ordinary skill in the arts willappreciate that numerous modifications and alterations are well withinthe scope of the present invention. Accordingly, the specification anddrawings are to be regarded in an illustrative rather than a restrictivesense.

1. A method for programming an anti-fuse memory block of a powerintegrated circuit (IC) device, comprising: applying a first voltage toa pin of the power IC device, the pin being connected to a drain of ahigh-voltage output field-effect transistor (HVFET) and also to a firstterminal of a tap transistor device, a tap voltage being provided at asecond terminal of the tap transistor device when an external voltageapplied to the pin exceeds a pinch-off voltage of the tap transistordevice, the first voltage being less than the pinch-off voltage; turningon a trimming MOSFET associated with a selected anti-fuse of theanti-fuse memory block, the selected anti-fuse including first andsecond capacitive plates separated by a dielectric layer, the firstcapacitive plate being coupled to a common node of the anti-fuse memoryblock, the second capacitive plate being coupled to a drain of thetrimming MOSFET; applying a write signal that causes a source of thetrimming MOSFET to be shorted to ground through a low-impedance;coupling the second terminal of the tap transistor device to the commonnode; applying a second voltage that is higher than the first voltage tothe pin such that a programming voltage is applied to the firstcapacitive plate of the selected anti-fuse, the programming voltagebeing high enough to cause a current to flow through the selectedanti-fuse sufficient to destroy at least a portion of the dielectriclayer, thereby electrically shorting the first and second capacitiveplates.
 2. The method of claim 1 wherein the second voltage is greaterthan the pinch-off voltage.
 3. The method of claim 1 wherein the writesignal is applied to a gate of a low-voltage field-effect transistor(LVFET) having a drain coupled to the source of the trimming MOSFET, asource of the LVFET being coupled to ground.
 4. The method of claim 1wherein the trimming MOSFET has a breakdown voltage that exceeds the tapvoltage.
 5. The method of claim 1 further comprising turning off allother anti-fuses of the anti-fuse memory block except the selectedanti-fuse.
 6. The method of claim 1 further comprising clamping theprogramming voltage across the selected anti-fuse.
 7. A method forprogramming an anti-fuse memory block of a power integrated circuit (IC)device, comprising: applying an external voltage to a pin of the powerIC device, the pin being connected to a drain of a high-voltage outputfield-effect transistor (HVFET) and also to a first terminal of a taptransistor device, a tap voltage being provided at a second terminal ofthe tap transistor device when the external voltage applied to the pinexceeds a pinch-off voltage of the tap transistor device; turning on anisolation transistor element to couple the external voltage to aselected anti-fuse element of the anti-fuse memory block, the selectedanti-fuse including first and second capacitive plates separated by adielectric layer, the first capacitive plate being coupled to a commonnode of the anti-fuse memory block; turning on a read/write elementcoupled to the selected anti-fuse element, thereby connecting the secondplate of the selected anti-fuse element to ground; coupling the secondterminal of the tap transistor device to the common node; and applying apulsed voltage to the pin such that a programming voltage is applied tothe first capacitive plate of the selected anti-fuse, the programmingvoltage being high enough to cause a current to flow through theselected anti-fuse sufficient to destroy at least a portion of thedielectric layer, thereby electrically shorting the first and secondcapacitive plates.
 8. The method of claim 7 wherein the pulsed voltageis greater than the pinch-off voltage.
 9. The method of claim 7 whereinthe read/write element comprises a low-voltage field-effect transistor(LVFET) having a drain coupled to the source of the trimming MOSFET anda source of the LVFET being coupled to ground.
 10. The method of claim 7further comprising turning off read/write elements associated with allother anti-fuses of the anti-fuse memory block except the selectedanti-fuse.
 11. The method of claim 7 further,comprising clamping theprogramming voltage across the selected anti-fuse.
 12. A method forprogramming an anti-fuse memory block of a power integrated circuit (IC)device, comprising: activating a switching element coupled to a selectedanti-fuse element of the anti-fuse memory block, the selected anti-fuseelement including first and second capacitive plates separated by adielectric layer, the first capacitive plate being coupled to aninternal node of the power IC device, the switching element beingcoupled to the second plate of the selected anti-fuse element;generating a programming voltage at the internal node from an externalvoltage applied to a pin of the power IC device, the pin being connectedto a drain of a high-voltage output field-effect transistor (HVFET), theprogramming voltage being high enough to cause a current to flow throughthe selected anti-fuse element sufficient to destroy at least a portionof the dielectric layer, thereby electrically shorting the first andsecond capacitive plates; and wherein the generating of the programmingvoltage comprises: limiting the external voltage to a tap voltageprovided at a second terminal of a tap transistor device, the taptransistor device having a first terminal connected to the pin and thedrain of the HVFET: turning on an isolation transistor element to couplethe tap voltage to the internal node, the tap voltage comprising theprogramming voltage.
 13. The method of claim 12 wherein the programmingvoltage comprises a pulsed voltage.
 14. The method of claim 12 furthercomprising clamping the programming voltage across the selectedanti-fuse.